MATTER / SENSING / MEMORY / COMPUTE
RESEARCH BY WON-TAE KOO
Overseas · 81 records
Granted Patents · 22 records
81 Semiconductor device including resistance change layer with metal-organic framework
Won-Tae Koo
United States
Application US18/315,381 · Filed 2023-05-10
Published US20240179926A1 · 2024-05-30
Granted US12701853B2 · 2026-08-04
80 Semiconductor device including a plurality of dielectric layers stacked on ferroelectric layer
Won-Tae Koo, Dong Ik Suh, Se Ho Lee
United States
Application US17/749,127 · Filed 2022-05-19
Published US20230098622A1 · 2023-03-30
Granted US12672292B2 · 2026-06-30
79 Semiconductor device including barrier dielectric layer including ferroelectric material
Dong Ik Suh, Won-Tae Koo
United States
Application US18/097,493 · Filed 2023-01-17
Published US20240081082A1 · 2024-03-07
Granted US12652805B2 · 2026-06-09
78 Semiconductor device including ferroelectric layer, dielectric layer, and charge trap site, and method of fabricating the same
Won-Tae Koo, Dong Ik Suh
United States
Application US17/738,568 · Filed 2022-05-06
Published US20230170381A1 · 2023-06-01
Granted US12641803B2 · 2026-05-26
77 Electronic device having resistance change property
Won-Tae Koo
United States
Application US17/890,899 · Filed 2022-08-18
Published US20230309427A1 · 2023-09-28
Granted US12477962B2 · 2025-11-18
76 Semiconductor device including resistance change layer and metal particle-embedded metal-organic framework layer and method of manufacturing the same
Woo Cheol Lee, Won-Tae Koo
United States
Application US17/881,057 · Filed 2022-08-04
Published US20230292636A1 · 2023-09-14
Granted US12329047B2 · 2025-06-10
75 Semiconductor device including interlayer insulating structure including metal-organic frame
Won-Tae Koo, Jae Hyun Han, Se Ho Lee
China
Application CN202210186198.1A · Filed 2022-02-28
Published CN115224043A · 2022-10-21
Granted CN115224043B · 2025-06-10
74 Semiconductor device including interconnection structure including MXene and method of manufacturing the same
Won-Tae Koo, Jae Hyun Han
United States
Application US17/707,860 · Filed 2022-03-29
Published US20230123138A1 · 2023-04-20
Granted US12308311B2 · 2025-05-20
73 Semiconductor device including epitaxial electrode layer and dielectric epitaxial structure and method of manufacturing the same
Won-Tae Koo, Dong Ik Suh
United States
Application US17/692,750 · Filed 2022-03-11
Published US20230103835A1 · 2023-04-06
Granted US12310039B2 · 2025-05-20
72 Semiconductor device including ferroelectric layer and insulation layer with metal particles and methods of manufacturing the same
Won-Tae Koo, Jae Gil Lee
United States
Application US17/674,835 · Filed 2022-02-17
Published US20230099330A1 · 2023-03-30
Granted US12261219B2 · 2025-03-25
71 Electronic device including channel layer including variable resistance and method of manufacturing the same
Won-Tae Koo, and Jaehyun Han
United States
Granted US12207572B2 · 2025-01-21
70 Electronic device including proton conductive layer and resistance change channel layer capable of receiving hydrogen
Won-Tae Koo and Jaehyun Han
United States
Granted US12201040B2 · 2025-01-14
69 Semiconductor device including heat insulating layer and method of manufacturing the same
Woocheol Lee and Won-Tae Koo
United States
Granted US12178145B2 · 2024-12-24
68 Semiconductor device including interlayer insulation structure including metal-organic framework layer
Won-Tae Koo, Seho Lee, and Jaehyun Han
United States
Granted US12082420B2 · 2024-09-03
67 Semiconductor device including ferroelectric layer and metal particles embedded in metal-organic framework layer
Won-Tae Koo, Jae Gil Lee
United States
Application US18/484,144 · Filed 2023-10-10
Published US20240040796A1 · 2024-02-01
Granted US12058871B2 · 2024-08-06
66 Method of treating target film and method of manufacturing semiconductor device
Won-Tae Koo, and Mir Im
United States
Granted US11978626B2 · 2024-05-07
65 Semiconductor device with interlayer insulation structure including MOF layer and method of manufacturing the same
Jaehyun Han and Won-Tae Koo
United States
Granted US11955529B2 · 2024-04-09
64 Semiconductor memory device
Jaehyun Han and Won-Tae Koo
United States
Granted US11943927B2 · 2024-03-26
63 Nanowire based hydrogen sensor
Reginald M. Penner, Won-Tae Koo, and Il-Doo Kim
United States
Application US16/791,159 · Filed 2020-02-14
Published US20200256838A1 · 2020-08-13
Granted US11913929B2 · 2024-02-27
62 Metal oxide nanofibers including functionalized catalyst using chitosan-metal complexes, and member for gas sensor, and gas sensor using the metal oxide nanofibers, and method of fabricating the same
Il-Doo Kim, Yong Jin Jeong, Won-Tae Koo, Ji-Soo Jang
United States
Application US16/448,546 · Filed 2019-06-21
Published US20190391101A1 · 2019-12-26
Granted US11428660B2 · 2022-08-30
61 Colorimetric sensor material for detecting hydrogen sulfide gas, which includes one-dimensional polymer nanofiber coupled to lead acetate particles obtained by high temperature stirring and quenching, and method of the same
Il-Doo Kim, Jun Hwe Cha, and Won-Tae Koo
United States
Application US15/454,954 · Filed 2017-03-09
Published US20170261479A1 · 2017-09-14
Granted US10613068B2 · 2020-04-07
60 Porous semiconductor metal oxide complex nanofibers including nanoparticle catalyst functionalized by nano-catalyst included within metal-organic framework, gas sensor and member using the same, and method of manufacturing the same
Il-Doo Kim, Won-Tae Koo, and Ji-Soo Jang
United States
Application US15/191,986 · Filed 2016-06-24
Published US20170003272A1 · 2017-01-05
Granted US10533987B2 · 2020-01-14
Patent Applications · 59 records
59 Semiconductor devices with hybrid memory layers and their manufacturing methods
Won-Tae Koo
China
Application CN202511074598.3A · Filed 2025-08-01
Published CN121969022A · 2026-05-01
58 Semiconductor device having hybrid memory layers and method of manufacturing the same
Won-Tae Koo
United States
Application US19/205,797 · Filed 2025-05-12
Published US20260120730A1 · 2026-04-30
57 Semiconductor device including ferroelectric and non-ferroelectric tunnel barrier layers and method of manufacturing the same
Won-Tae Koo, Hwan Young Kim
United States
Application US19/018,380 · Filed 2025-01-13
Published US20260059842A1 · 2026-02-26
56 Electrochemical memory cell
Pil Hoon Jung, Won-Tae Koo
United States
Application US19/005,591 · Filed 2024-12-30
Published US20260040836A1 · 2026-02-05
55 Semiconductor device and manufacturing method
Hwan Young Kim, Won-Tae Koo
United States
Application US18/917,855 · Filed 2024-10-16
Published US20260040557A1 · 2026-02-05
54 Semiconductor device and manufacturing method
Hwan Young Kim, Won-Tae Koo
United States
Application US18/917,850 · Filed 2024-10-16
Published US20260040556A1 · 2026-02-05
53 Semiconductor device including bonding of stacked structure parts and method of fabricating the same
Won-Tae Koo, Mir Im
United States
Application US18/960,820 · Filed 2024-11-26
Published US20260005168A1 · 2026-01-01
52 Semiconductor devices including bonding of stacked structure portions and methods for manufacturing the same.
Won-Tae Koo, Mir Im
China
Application CN202510177427.7A · Filed 2025-02-18
Published CN121237660A · 2025-12-30
51 Semiconductor devices including quantum dots and their manufacturing methods
Hwan Young Kim, Won-Tae Koo
China
Application CN202411399049.9A · Filed 2024-10-09
Published CN121218864A · 2025-12-26
50 Semiconductor device including quantum dots and manufacturing method
Hwan Young Kim, Won-Tae Koo
United States
Application US18/824,501 · Filed 2024-09-04
Published US20250393484A1 · 2025-12-25
49 Semiconductor memory device and manufacturing method of semiconductor memory device
Jae Hyun Han, Won-Tae Koo
United States
Application US19/304,214 · Filed 2025-08-19
Published US20250386553A1 · 2025-12-18
48 Semiconductor device including a plurality of resistance change layers
Inventors: see patent record
United States
Application US18/930,816 · Filed 2024-10-29
Published US20250386744A1 · 2025-12-18
47 Semiconductor devices including multiple resistive switching layers
Won-Tae Koo, Woo Cheol Lee
China
Application CN202510296296.4A · Filed 2025-03-13
Published CN121152555A · 2025-12-16
46 Memory cell including electro-chemical memory element and semiconductor device including the same
Mir Im, Won-Tae Koo, Pil Hoon Jung
United States
Application US18/931,864 · Filed 2024-10-30
Published US20250344383A1 · 2025-11-06
45 Storage cells including electrochemical storage elements and semiconductor devices including them.
Mir Im, Won-Tae Koo, Pil Hoon Jung
China
Application CN202510297278.8A · Filed 2025-03-13
Published CN120895071A · 2025-11-04
44 Semiconductor device having crystalline thin film ferroelectric layer and method of manufacturing the same
Won-Tae Koo
China
Application CN202510114832.4A · Filed 2025-01-24
Published CN120882003A · 2025-10-31
43 Semiconductor device having a crystalline thin-film ferroelectric layer and method of manufacture
Won-Tae Koo
United States
Application US18/917,841 · Filed 2024-10-16
Published US20250338501A1 · 2025-10-30
42 Semiconductor memory device with a memory cell having a memory cell with a memory cell having a memory cell
Won-Tae Koo, Dong Ik Suh
China
Application CN202411736712.XA · Filed 2024-11-29
Published CN120786895A · 2025-10-14
41 Semiconductor memory device
Inventors: see patent record
United States
Application US18/891,864 · Filed 2024-09-20
Published US20250318138A1 · 2025-10-09
40 Resistive memory cell, resistive memory array including the same, and manufacturing method thereof
Won-Tae Koo, Young Jae Kwon
China
Application CN202410950637.0A · Filed 2024-07-16
Published CN120264769A · 2025-07-04
39 Resistive memory cell, resistive memory array including the resistive memory cell and method of manufacturing the resistive memory cell
Won-Tae Koo, Young Jae Kwon
United States
Application US18/674,618 · Filed 2024-05-24
Published US20250221322A1 · 2025-07-03
38 Semiconductor device including ferroelectric tunnel barrier layer
Won-Tae Koo
United States
Application US18/668,148 · Filed 2024-05-18
Published US20250212492A1 · 2025-06-26
37 Semiconductor device including a ferroelectric tunnel barrier layer
Won-Tae Koo
China
Application CN202411537689.1A · Filed 2024-10-31
Published CN120187044A · 2025-06-20
36 Electrochemical storage unit, neural network storage device containing the same and manufacturing method thereof
Won-Tae Koo, Pil Hoon Jung, Joong Sik Kim
China
Application CN202410366553.2A · Filed 2024-03-28
Published CN120152611A · 2025-06-13
35 Electrochemical memory cell, neural network memory including the electrochemical memory cell
Won-Tae Koo, Pil Hoon Jung, Joong Sik Kim
United States
Application US18/582,323 · Filed 2024-02-20
Published US20250194440A1 · 2025-06-12
34 Electrochemical memory cell and neural network memory including the same
Won-Tae Koo, Pil Hoon Jung
United States
Application US18/433,859 · Filed 2024-02-06
Published US20250169082A1 · 2025-05-22
33 Electrochemical storage unit and neural network memory including the same
Won-Tae Koo, Pil Hoon Jung
China
Application CN202410356434.9A · Filed 2024-03-27
Published CN120020957A · 2025-05-20
32 Semiconductor device including interlayer insulation structure including metal-organic framework
Won-Tae Koo, Jae Hyun Han, Se Ho Lee
United States
Application US18/782,430 · Filed 2024-07-24
Published US20240381655A1 · 2024-11-14
31 Semiconductor memory device and manufacturing method of semiconductor memory device
Jaehyun Han, and Won-Tae Koo
United States
Application US18/675467 · Filed 2024-05-28
Published US20240313073A1 · 2024-09-19
30 Nanowire based hydrogen sensors
Reginald M. Penner, Won-Tae Koo, Il-Doo Kim
United States
Application US18/420,137 · Filed 2024-01-23
Published US20240310344A1 · 2024-09-19
29 Method of manufacturing semiconductor device by thermal treatment using laser light
Won-Tae Koo, Mir Im
United States
Application US18/625,405 · Filed 2024-04-03
Published US20240249937A1 · 2024-07-25
28 Semiconductor device including connections between stacked structures and manufacturing method thereof
Mir Im, Won-Tae Koo
China
Application CN202311123482.5A · Filed 2023-09-01
Published CN117790466A · 2024-03-29
27 Semiconductor device including connection portion between stacked structures and method of fabricating the same
Mir Im, Won-Tae Koo
United States
Application US18/192,643 · Filed 2023-03-30
Published US20240105602A1 · 2024-03-28
26 Semiconductor device including barrier dielectric layer including ferroelectric material
Dong Ik Suh, Won-Tae Koo
China
Application CN202311002773.9A · Filed 2023-08-10
Published CN117642062A · 2024-03-01
25 Semiconductor device including a ferroelectric structure having a moiré pattern of two-dimensional material layers
Won-Tae Koo
China
Application CN202310416293.0A · Filed 2023-04-18
Published CN117334739A · 2024-01-02
24 Electronic device with resistance change characteristics
Won-Tae Koo
China
Application CN202211415310.0A · Filed 2022-11-11
Published CN116806097A · 2023-09-26
23 Semiconductor device including thermal insulation layer and manufacturing method thereof
Woo Cheol Lee, Won-Tae Koo
China
Application CN202211406604.7A · Filed 2022-11-10
Published CN116801710A · 2023-09-22
22 Semiconductor device and manufacturing method thereof
Woo Cheol Lee, Won-Tae Koo
China
Application CN202211389344.7A · Filed 2022-11-08
Published CN116801709A · 2023-09-22
21 Semiconductor device including ferroelectric layer and dielectric structure and method of manufacturing the same
Won-Tae Koo, Dong Ik Suh, Se Ho Lee
Taiwan
Application TW111132538A · Filed 2022-08-29
Published TW202329417A · 2023-07-16
20 Semiconductor device including charge trapping sites and method of fabricating the same
Won-Tae Koo, Dong Ik Suh
China
Application CN202210858453.2A · Filed 2022-07-20
Published CN116209276A · 2023-06-02
19 Semiconductor device including dielectric structure including ferroelectric layer and dielectric layer
Won-Tae Koo, and Dong Ik Suh
China
Application CN202310643999.0A · 2023-06-01
18 Semiconductor device including interconnection structure including MXene and method of manufacturing the same
Won-Tae Koo, Jae Hyun Han
China
Application CN202210833246.1A · Filed 2022-07-14
Published CN115995449A · 2023-04-21
17 Semiconductor device and manufacturing method thereof
Won-Tae Koo, Dong Ik Suh
China
Application CN202210836293.1A · Filed 2022-07-15
Published CN115939111A · 2023-04-07
16 Semiconductor device including ferroelectric layer and dielectric structure and method of manufacturing the same
Won-Tae Koo, Dong Ik Suh, Se Ho Lee
China
Application CN202210991048.8A · Filed 2022-08-18
Published CN115867039A · 2023-03-28
15 Semiconductor device and method for manufacturing the same
Won-Tae Koo, Jae Gil Lee
China
Application CN202210843169.8A · Filed 2022-07-18
Published CN115863428A · 2023-03-28
14 Electronic device including channel layer with variable resistance and method of manufacturing same
Won-Tae Koo, Jae Hyun Han
China
Application CN202210844301.7A · Filed 2022-07-18
Published CN115810672A · 2023-03-17
13 Semiconductor device and method of manufacturing semiconductor device
Won-Tae Koo, Jae Gil Lee
China
Application CN202210311915.9A · Filed 2022-03-28
Published CN115768121A · 2023-03-07
12 Semiconductor device and method for manufacturing the same
Won-Tae Koo, Jae Hyun Han
China
Application CN202210312176.5A · Filed 2022-03-28
Published CN115623789A · 2023-01-17
11 Semiconductor device including dielectric structure including ferroelectric layer and dielectric layer
Won-Tae Koo, and Dong Ik Suh
United States
Application US18/071256 · 2022-11-29
10 Semiconductor device including ferroelectric structure having moiré pattern of two-dimensional material layer
Won-Tae Koo
United States
Application US18/057658 · 2022-11-21
09 Semiconductor device including active layer having variable resistance
Won-Tae Koo, Jaegil Lee, and Jaehyun Han
China
Application 202210347142.X · 2022-04-01
08 Method of processing target film and method of manufacturing semiconductor device
Won-Tae Koo and Mir Im
China
Application 202210347106.3 · 2022-04-01
07 Semiconductor memory device and method for manufacturing semiconductor memory device
Jaehyun Han and Won-Tae Koo
China
Application CN202111588402.4 · 2021-12-23
06 Electronic device comprising resistive channel layer
Won-Tae Koo and Jaehyun Han
China
Application 202111174452.8 · 2021-10-09
05 Semiconductor device including active layer with variable resistance
Won-Tae Koo, Jaegil Lee, and Jaehyun Han
United States
Application 17/496971 · 2021-10-08
04 Semiconductor memory device
Jaehyun Han and Won-Tae Koo
China
Application 202111149241.9 · 2021-09-29
03 Semiconductor memory device and manufacturing method of semiconductor memory device
Jaehyun Han and Won-Tae Koo
United States
Application 17/483215 · 2021-09-23
02 Nanowire based hydrogen sensor
Reginald M. Penner, Won-Tae Koo, and Il-Doo Kim
PCT
Published WO2019/036502A1 · 2019-02-21
01 Colorimetric sensor material for detecting hydrogen sulfide gas, which includes one-dimensional polymer nanofiber coupled to lead acetate particles obtained by high temperature stirring and quenching, and method of the same
Il-Doo Kim, Jun Hwe Cha, and Won-Tae Koo
PCT
Application PCT/KR2016/014767 · Filed 2016-12-16
Published WO2017155189A1 · 2017-09-14
Korea · 57 records
Granted Patents · 21 records
57 semiconductor device having interlayer insulation structure including metal-organic framework layer
Won-Tae Koo, Jae Hyun Han
Korea
Application KR1020210091873A · Filed 2021-07-13
Published KR20230011174A · 2023-01-20
Grant publication KR102916125B1 · 2026-01-21
56 Semiconductor device including ferroelectric layer and dielectric structure
Won-Tae Koo, Dong Ik Suh, Se Ho Lee
Korea
Application KR1020210126755A · Filed 2021-09-24
Published KR20230043633A · 2023-03-31
Grant publication KR102889242B1 · 2025-11-20
55 semiconductor device including ferroelectric layer and metal particle embedded metal-organic framework layer
Won-Tae Koo, Jae Gil Lee
Korea
Application KR1020210116639A · Filed 2021-09-01
Published KR20230033542A · 2023-03-08
Grant publication KR102872611B1 · 2025-10-17
54 Electronic device having resistance change channel layer
Won-Tae Koo, Jae Hyun Han
Korea
Application KR1020210023707A · Filed 2021-02-22
Published KR20220120056A · 2022-08-30
Grant publication KR102842040B1 · 2025-08-04
53 One dimensional porous dissimilar nanobelt, gas sensor using the same and gas sensor fabricating method
Cheol Choi, Mihee Jung, Won-Tae Koo, Il-Doo Kim, Daekeun Park, and Junghwang Ahn
Korea
Application KR1020200038975A · Filed 2020-03-31
Published KR20210121746A · 2021-10-08
Granted KR102389583B1 · 2022-04-19
Grant publication KR102389583B1 · 2022-04-25
52 Gas sensor and member using metal oxide nanofibers including nanoscale catalysts and multichannel, and manufacturing method thereof
Il-Doo Kim, Yong-Jin Jung, and Won-Tae Koo
Korea
Granted 10-2092452 · 2020-03-17
51 Particulate matter filter and member using two dimensional hierarchical metal-organic framework functionalized on membrane, and manufacturing method thereof
Il-Doo Kim, Won-Tae Koo, Ji-Soo Jang, and Wontae Hwang
Korea
Granted 10-2039243 · 2019-10-25
50 Gas sensor and member using metal oxide nanofibers including nanocatalysts by using chitosan-metal complexes, and manufacturing method thereof
Il-Doo Kim, Yong-Jin Jung, Won-Tae Koo, and Ji-Soo Jang
Korea
Application KR1020180071884A · Filed 2018-06-22
Granted KR101973901B1 · 2019-04-23
Grant publication KR101973901B1 · 2019-04-29
49 Gas sensing layers using metal oxide nanocube with p-n junction and manufacturing method thereof
Il-Doo Kim, Ji-Soo Jang, and Won-Tae Koo
Korea
Application KR1020170094505A · Filed 2017-07-26
Published KR20180064965A · 2018-06-15
Granted KR101932351B1 · 2018-12-18
Grant publication KR101932351B1 · 2018-12-24
48 Gas sensor and member using nanoscale catalysts loaded hollow metal oxide nanocages using metal-organic framework templates, and manufacturing method thereof
Il-Doo Kim, Won-Tae Koo, and Ji-Soo Jang
Korea
Granted 10-1932349 · 2018-12-18
47 Gas sensor using interconnected multi-dimensional porosity loaded metal oxide nanofibers functionalized by nanoparticle catalyst, and manufacturing method thereof
Il-Doo Kim, Dong-Ha Kim, Ji-Soo Jang, Won-Tae Koo
Korea
Application KR1020180047356A · Filed 2018-04-24
Published KR20180071991A · 2018-06-28
Granted KR101893326B1 · 2018-08-23
Grant publication KR101893326B1 · 2018-08-29
46 Gas sensor using interconnected multi-dimensional porosity loaded metal oxide nanofibers functionalized by nanoparticle catalyst, and manufacturing method thereof
Il-Doo Kim, Dong-Ha Kim, Ji-Soo Jang, Won-Tae Koo
Korea
Application KR1020160174662A · Filed 2016-12-20
Published KR20180071709A · 2018-06-28
Granted KR101893267B1 · 2018-08-23
Grant publication KR101893267B1 · 2018-08-29
45 Gas sensor and member using metal oxide semiconductor porous microbelts including nanoparticle catalyst and meso- & macropores, and manufacturing method thereof
Il-Doo Kim, Min-Hyeok Kim, Ji-Soo Jang, and Won-Tae Koo
Korea
Granted 10-1859851 · 2018-05-14
44 Gas sensor and member using ultra-small catalyst loaded porous hollow metal oxide semiconductor composite nanospheres by using nano-catalyst loaded metal-organic frameworks and polymer templates, and manufacturing method thereof
Il-Doo Kim, Won-Tae Koo
Korea
Granted 10-1837287 · 2018-03-05
43 Colorimetric sensors and member in one dimensional polymer nanowire bundle shapes for detecting hydrogen sulfide gas and manufacturing method thereof
Il-Doo Kim, Jun Hwe Cha, Won-Tae Koo
Korea
Application 10-2016-0053021
Granted KR101822277B1 · 2018-01-19
42 Textile colorimetric sensors and member with dye anchored one dimensional polymer nanofibers for detecting hydrogen sulfide gas and manufacturing method thereof
Il-Doo Kim, Won-Tae Koo, Jun Hwe Cha, and Dong-Gi Geum
Korea
Granted 10-1792363 · 2017-10-25
41 Gas sensor and member using porous metal oxide semiconductor composite nanofibers including nanoparticle catalyst functionalized by nano-catalyst included within metal-organic framework, and manufacturing method thereof
Il-Doo Kim, Won-Tae Koo, and Ji-Soo Jang
Korea
Granted 10-1787190 · 2017-10-11
40 Metal grid mesh and metal nanowire mixed transparent electrodes and method of making same
Il-Doo Kim, Doo-Young Youn, Won-Tae Koo, Ji-Hyun Lee, and Zhenhao Luo
Korea
Granted 10-1777016 · 2017-09-04
39 Colorimetric sensors and member with one dimensional polymer nanofibers with fine dye particles obtained by high temperature stirring and quenching for detecting hydrogen sulfide gas and manufacturing method thereof
Il-Doo Kim, Jun Hwe Cha, and Won-Tae Koo
Korea
Granted 10-1761057 · 2017-07-18
38 Gas sensor fabrication method of catalyst-loaded porous metal oxide nanofiber metal oxide nanofiber networks prepared by transferring of catalyst-coated polymeric sacrificial colloid template, and gas sensors using the same
Il-Doo Kim, Seon-Jin Choi, and Won-Tae Koo
Korea
Granted 10-1714961 · 2017-03-03
37 Gas sensor fabrication method of catalyst-loaded porous metal oxide nanofiber metal oxide nanofiber networks prepared by transferring of catalyst-coated polymeric sacrificial colloid template, and gas sensors using the same
Il-Doo Kim, Seon-Jin Choi, and Won-Tae Koo
Korea
Granted 10-1684738 · 2016-12-02
Patent Applications · 36 records
36 Semiconductor Device Having Hybrid Memory Layers and Method of Manufacturing the Same
Won-Tae Koo
Korea
Application KR1020240150974A · Filed 2024-10-30
Published KR20260063386A · 2026-05-07
35 semiconductor device including ferroelectric tunnel barrier layer and non-ferroelectric tunnel barrier layer and method of manufacturing the same
Won-Tae Koo, Hwan Young Kim
Korea
Application KR1020240113880A · Filed 2024-08-23
Published KR20260029165A · 2026-03-04
34 반도체 장치 및 반도체 장치의 제조방법
Hwan Young Kim, Won-Tae Koo
Korea
Application KR1020240103739A · Filed 2024-08-05
Published KR20260020607A · 2026-02-12
33 Semiconductor device and method of manufacturing semiconductor device
Inventors: see patent record
Korea
Application KR1020240103715A · Filed 2024-08-05
Published KR20260020595A · 2026-02-12
32 Electrochemical Memory Cell
Pil Hoon Jung, Won-Tae Koo
Korea
Application KR1020240101012A · Filed 2024-07-30
Published KR20260017784A · 2026-02-06
31 semiconductor device including bonding of stacked structure parts and method of fabricating the same
Won-Tae Koo, Mir Im
Korea
Application KR1020240084868A · Filed 2024-06-27
Published KR20260001656A · 2026-01-06
30 Semiconductor device and manufacturing method of semiconductor device
Hwan Young Kim, Won-Tae Koo
Korea
Application KR1020240082532A · Filed 2024-06-25
Published KR20260000171A · 2026-01-02
29 semiconductor device including a plurality of resistance change layers
Inventors: see patent record
Korea
Application KR1020240077250A · Filed 2024-06-13
Published KR20250176890A · 2025-12-22
28 memory cell including electro-chemical memory element and semiconductor device including the same
Mir Im, Won-Tae Koo, Pil Hoon Jung
Korea
Application KR1020240059466A · Filed 2024-05-03
Published KR20250160017A · 2025-11-11
27 Semiconductor Device Having a crystalline Thin Ferro-electric Layer and a Method of Manufacturing the Semiconductor Device
Won-Tae Koo
Korea
Application KR1020240057662A · Filed 2024-04-30
Published KR20250158362A · 2025-11-06
26 Semiconductor memory device
Inventors: see patent record
Korea
Application KR1020240045306A · Filed 2024-04-03
Published KR20250147108A · 2025-10-13
25 Resistive Memory Cell, Resistive Memory Array Including The Memory Cells And Method of Manufacturing The Memory Cell
Won-Tae Koo, Young Jae Kwon
Korea
Application KR1020240000929A · Filed 2024-01-03
Published KR20250106502A · 2025-07-10
24 Semiconductor device including ferroelectric tunnel juncion layer
Won-Tae Koo
Korea
Application KR1020230187251A · Filed 2023-12-20
Published KR20250096215A · 2025-06-27
23 Electrochemical Memory Cell, Neural Network Memory Including The Electrochemical Memory Cell, And Method of Manufacturing The Electrochemical Memory Cell
Won-Tae Koo, Pil Hoon Jung, Joong Sik Kim
Korea
Application KR1020230179063A · Filed 2023-12-11
Published KR20250089307A · 2025-06-18
22 Electrochemical Memory Cell and Neural Network Memory Including The Same
Won-Tae Koo, Pil Hoon Jung
Korea
Application KR1020230160371A · Filed 2023-11-20
Published KR20250073899A · 2025-05-27
21 semiconductor device including ferroelectric structure having moire pattern of two dimensional material layer
Won-Tae Koo
Korea
Application KR1020220081529A · Filed 2022-07-01
Published KR20240003673A · 2024-01-09
20 Electronic device having resistance change property
Won-Tae Koo
Korea
Application KR1020220036338A · Filed 2022-03-23
Published KR20230138360A · 2023-10-05
19 semiconductor device including resistance change layer and metal particle embedded metal-organic framework layer
Woo Cheol Lee, Won-Tae Koo
Korea
Application KR1020220031717A · Filed 2022-03-14
Published KR20230134386A · 2023-09-21
18 semiconductor device including charge trap site and method of fabricating the same
Won-Tae Koo, Dong Ik Suh
Korea
Application KR1020210169548A · Filed 2021-11-30
Published KR20230081476A · 2023-06-07
17 semiconductor device including electrode layer and dielectric structure that are epitaxial layers
Won-Tae Koo, Dong Ik Suh
Korea
Application KR1020210132006A · Filed 2021-10-05
Published KR20230048967A · 2023-04-12
16 Semiconductor device including resistance change layer including metal-organic framework layer
Won-Tae Koo
Korea
Application 10-2022-0163461 · 2022-11-29
15 Semiconductor device including connection portion between stacked structures and method of fabricating the same
Mir Im and Won-Tae Koo
Korea
Application 10-2022-0123452 · 2022-09-28
14 Semiconductor device including barrier dielectric layer including ferroelectric material
Dong Ik Suh and Won-Tae Koo
Korea
Application 10-2022-0107769 · 2022-08-26
13 Semiconductor device having dielectric structure including ferroelectric layer and dielectric layer
Won-Tae Koo and Dong Ik Suh
Korea
Application 10-2022-0085972 · 2022-07-12
12 Semiconductor device having a heat insulating layer
Woochoel Lee and Won-Tae Koo
Korea
Application 10-2022-0035022 · 2022-03-21
11 Semiconductor device having interconnection structure including MXene
Won-Tae Koo and Jaehyun Han
Korea
Application 10-2021-0138869 · 2021-10-18
10 Semiconductor device including ferroelectric layer and metal particle embedded insulation layer
Won-Tae Koo, Jaegil Lee
Korea
Application 10-2021-0126756 · 2021-09-24
09 Electronic device including channel layer having variable resistance and method of manufacturing the same
Won-Tae Koo and Jaehyun Han
Korea
Application 10-2021-0122059 · 2021-09-13
08 Thermal treatment of thin film and method of manufacturing semiconductor device
Won-Tae Koo, Mir Im
Korea
Application 10-2021-0086124 · 2021-06-30
07 Semiconductor device including active layer having variable resistance
Won-Tae Koo, Jaehyun Han, Jaegil Lee, and Seho Lee
Korea
Application 10-2021-0056927 · 2021-04-30
06 Semiconductor device having interlayer insulation structure including metal-organic framework layer
Won-Tae Koo, Jaehyun Han, and Seho Lee
Korea
Application 10-2021-0049477 · 2021-04-15
05 Semiconductor memory device and manufacturing method of the same
Jaehyun Han, and Won-Tae Koo
Korea
Application 10-2021-0044294 · 2021-04-05
04 Semiconductor memory device
Jaehyun Han, and Won-Tae Koo
Korea
Application 10-2021-0028914 · 2021-03-04
03 Nanowire based hydrogen sensor
Reginald M. Penner, Won-Tae Koo, Il-Doo Kim
Korea
Application KR1020207007506A · Filed 2018-08-14
Published KR20200041935A · 2020-04-22
02 Metal oxide semiconductors having a one-dimensional nanotube structure including nanoparticle catalysts excellent in light scattering and transmission characteristics, members for light irradiation type gas sensors using the same, gas sensors and methods for manufacturing the same
Il-Doo Kim, Sang-Joon Kim, Ji-Soo Jang, Won-Tae Koo, Dong-Ha Kim, and Joon-Young Kang
Korea
Application 10-2018-0086418 · 2018-07-25
01 Gas sensor and member using metal oxide nanotubes including nanoscale heterogeneous catalysts by using metal-organic framework, and manufacturing method thereof
Il-Doo Kim, Won-Tae Koo, Ji-Soo Jang
Korea
Application KR1020160166444A · Filed 2016-12-08
Published KR20180065493A · 2018-06-18